Paper
23 November 1999 High-power source and illumination system for extreme ultraviolet lithography
Glenn D. Kubiak, Luis J. Bernardez II, Kevin D. Krenz, William C. Replogle, William C. Sweatt, Donald W. Sweeney, Russell M. Hudyma, Harry Shields
Author Affiliations +
Abstract
A clean, high-power Extreme Ultraviolet (EUV) light source is being developed for Extreme Ultraviolet Lithography (EUVL). The source is based on a continuous jet of condensable gas irradiated with a diode-pumped solid state laser producing a time-averaged output power of 1700 W at 5000 - 6000 Hz. An illumination system is being assembled to collect and deliver the EUV output from the source and deliver it to a reticle and projection optics box to achieve an EUV exposure rate equivalent to ten 300-mm wafers per hour.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Glenn D. Kubiak, Luis J. Bernardez II, Kevin D. Krenz, William C. Replogle, William C. Sweatt, Donald W. Sweeney, Russell M. Hudyma, and Harry Shields "High-power source and illumination system for extreme ultraviolet lithography", Proc. SPIE 3767, EUV, X-Ray, and Neutron Optics and Sources, (23 November 1999); https://doi.org/10.1117/12.371111
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Cited by 9 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Plasma

Extreme ultraviolet lithography

Xenon

Mirrors

Reticles

Chlorine

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