Integrated packaging of uni-traveling-carrier photodiodes on sapphire substrate by wafer bonding

Yakov Royter; Tomofumi Furuta; Satoshi Kodama; Nabil Sahri; Tadao Nagatsuma; Tadao Ishibashi

doi:10.1117/12.370214

12 November 1999 Integrated packaging of uni-traveling-carrier photodiodes on sapphire substrate by wafer bonding

Yakov Royter, Tomofumi Furuta, Satoshi Kodama, Nabil Sahri, Tadao Nagatsuma, Tadao Ishibashi

Proceedings Volume 3795, Terahertz and Gigahertz Photonics; (1999) https://doi.org/10.1117/12.370214
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Integrated Packaging (IP) technology was developed to enable further application of ultrahigh-speed Uni-Traveling-Carrier photodiodes (UTC-PDs). In IP modules, devices are fabricated on the package substrate together with all interconnections using standard semiconductor processing techniques after wafer bonding of device epitaxial layers. Thus, problems associated with substrate discontinuity and wire/solder interconnections encountered in conventional hybrid packaging of > 100 GHz devices are eliminated. UTC-PDs, integrated with millimeter-wave coplanar waveguides (CPWs), were fabricated on package compatible sapphire with high yield. Device performance was not affected by wafer bonding. Furthermore, devices with record 3-dB bandwidth of 174 GHz were obtained. These devices produced output voltages of 1.45 V (29 mA) at higher input levels while maintaining 3-dB bandwidth above 150 GHz. CPWs fabricated on sapphire exhibited low dispersion. Thus, wafer bonding on sapphire is a promising technique for IP module fabrication.

Citation Download Citation

Yakov Royter, Tomofumi Furuta, Satoshi Kodama, Nabil Sahri, Tadao Nagatsuma, and Tadao Ishibashi "Integrated packaging of uni-traveling-carrier photodiodes on sapphire substrate by wafer bonding", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); https://doi.org/10.1117/12.370214

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