Influence of doping Y2O3 and Nb2O5 on ZrO2 characteristics in ZrO2-SiO2-P2O5 semiconductive ceramic humidity sensors

Xuzhou Hu; Xiaochun Hu; Yu Yang; Xinghui Wu; Henry M. van Driel; Xijia Gu

doi:10.1117/12.361147

8 September 1999 Influence of doping Y₂O₃ and Nb₂O₅ on ZrO₂ characteristics in ZrO₂-SiO₂-P₂O₅ semiconductive ceramic humidity sensors

Xuzhou Hu, Xiaochun Hu, Yu Yang, Xinghui Wu, Henry M. van Driel, Xijia Gu

Author Affiliations +

Proceedings Volume 3862, 1999 International Conference on Industrial Lasers; (1999) https://doi.org/10.1117/12.361147
Event: International Symposium on Industrial Lasers, 1999, Wuhan, China

Abstract

Semiconductive ceramic humidity sensors based on ZnO₂ * SiO₂ * P₂O₅ doped with Y₂O₃ and Nb₂O₅ are prepared by the solid phase reaction at high temperature. Y₂O₃ and Nb₂O₅ change ZrO₂ character from an isolator to N- and P-type semiconductor separately. The Y₂O₃-, Nb₂O₅- and non-doped samples have extremely different total resistance at the room temperature and a certain relative humidity. The former is far less than the later. By means of X-ray diffraction, Fourier infrared absorption and Raman backward scattering spectra, the microstructure of ZrO₂ grain in non-doped and Y₂O₃- or Nb₂O₅-doped samples are known to belong respectively to monoclinic and tetragonal symmetrical crystal systems. On the basis of the standard absorption peak sites, four fundamental phonon energies of ZrO₂ are calculated: TO equals 0.0457, LO equals 0.0365, TA equals 0.0069, LA equals 0.0249 ev. All the Fourier infrared absorption speaks of ZrO₂ in each and every ZrO₂ * SiO₂ * P₂O₅ humidity sensor consist of two or more out of the four elementary phonons in different combinations. Any and every Raman backward scattering peak of ZrO₂ is made up of two or more out of these phonons too.

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Xuzhou Hu, Xiaochun Hu, Yu Yang, Xinghui Wu, Henry M. van Driel, and Xijia Gu "Influence of doping Y₂O₃ and Nb₂O₅ on ZrO₂ characteristics in ZrO₂-SiO₂-P₂O₅ semiconductive ceramic humidity sensors", Proc. SPIE 3862, 1999 International Conference on Industrial Lasers, (8 September 1999); https://doi.org/10.1117/12.361147

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