Crystallization process in thin films of GeSbTe

Chubing Peng; Masud Mansuripur

doi:10.1117/12.997651

28 June 1999 Crystallization process in thin films of GeSbTe

Chubing Peng, Masud Mansuripur

Proceedings Volume 3864, Joint International Symposium on Optical Memory and Optical Data Storage 1999; 38641T (1999) https://doi.org/10.1117/12.997651
Event: Optical Data Storage, 1999, Kauai, HI, United States

Abstract

Phase-change (PC) rewritable optical recording uses a focused laser beam to reversibly switch a submicron-sized area of a thin chalcogenide film between its amorphous and crystalline states. Information is generally stored in these media in the form of melt-quenched amorphous marks on a crystalline background.

Citation Download Citation

Chubing Peng and Masud Mansuripur "Crystallization process in thin films of GeSbTe", Proc. SPIE 3864, Joint International Symposium on Optical Memory and Optical Data Storage 1999, 38641T (28 June 1999); https://doi.org/10.1117/12.997651

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available