Paper
3 April 2000 Novel high-power red laser diode transverse structure
Author Affiliations +
Proceedings Volume 3889, Advanced High-Power Lasers; (2000) https://doi.org/10.1117/12.380901
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan
Abstract
In the already classical separate confinement (SCH) quantum well (QW) semiconductor laser diode structures many of the desired performances are contradictory coupled through the structural parameters -- i.e. a structural parameter modification leading to the improvement of one or more laser performances will produce the deterioration of at least another performance. Based on an analysis of this contradictory coupling a novel transverse layer structure that alleviates the problem and enables improved laser diode performances is proposed. Both optical simulation and a fully self-consistent model are used in a design optimization methodology and simple evaluation and optimization criteria for the new transverse structure are derived. A number of the analyzed high-power edge-emitting GazIn1-zP/(AlxGa1- x)yIn1-yP/GaAs quantum well laser structures were prepared using all-solid-source molecular beam epitaxy (SS-MBE) for layer growth and remarkable performances were obtained (continuous wave output powers of 3 W at 670 nm, 2 W at 650 nm, and 1 W at 630 nm; threshold current densities of 350 - 450 Angstrom/cm2 for 670 nm, 500 - 540 A/cm2 for 650 nm, and 600 - 680 A/cm2 for 630 nm). Although only a few of the optimization features were implemented the good agreement between measurements and simulations for the prepared structures indicate that significant performance improvements -- predicted by the simulations -- are still possible.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mihail M. Dumitrescu, Seppo Orsila, Pekka Savolainen, Mika Toivonen, and Markus Pessa "Novel high-power red laser diode transverse structure", Proc. SPIE 3889, Advanced High-Power Lasers, (3 April 2000); https://doi.org/10.1117/12.380901
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Cited by 3 scholarly publications.
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KEYWORDS
Quantum wells

Semiconductor lasers

Cladding

Refractive index

Near field optics

GRIN lenses

Optical simulations

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