Physical effects caused by superluminal transfer of information

Valentine P. Oleinik

doi:10.1117/12.368376

4 November 1999 Physical effects caused by superluminal transfer of information

Valentine P. Oleinik

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368376
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The contribution of superluminal excitations to the potential and vortex components of the potentials and electric and magnetic field strengths of electromagnetic field is considered. It is noted that imposing the boundary conditions, corresponding to a combination of retarded and advanced interactions, on the solution of the equations of electrodynamics enables one to explain the result of Kosyrev's observations, according to which for any space object three images registered by earthly detectors are available. The effect of relativity of physical processes caused by instantaneous signals is discussed. It is shown that this effect presents a way of predicting the behavior of ap physical system in future, provided its evolution is strictly determined. According to the results received, the abnormal optical phenomena, arising in the immediate vicinity of plasma flows, are natural manifestations of the own fields surrounding these flows. The mechanism of interaction-at-a-distance between bodies, caused by the instantaneous transfer of excitations of the own fie of charged particles, is considered. It is shown that because of the presence of the tail of electrons' wave function and of the own field, transmitting signals with superluminal sped, the photon teleportation is possible. The Principle of Self-Organization is formulated that operates the world and creates all its variety.

Citation Download Citation

Valentine P. Oleinik "Physical effects caused by superluminal transfer of information", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368376

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