Temperature stability of the IBM-formed CdxHg1-xTe p-n structure

Igor I. Izhnin

doi:10.1117/12.368411

4 November 1999 Temperature stability of the IBM-formed Cd_xHg_1-xTe p-n structure

Igor I. Izhnin

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368411
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The influence of thermal annealing on electrical properties of the p-n structures formed by ion beam milling (IBM) on usually vacancy doped Cd_xHg_1-xTe single crystals with p(77K) equals 5.8 X 10¹⁵ cm^-3 was investigated. After IBM of the initial samples the n-type layers were created with the thickness about 10 (mu) and electron concentration of the mane part of n-type layers 5 X 10¹⁴ cm^-3. P-n structures were annealed on air at 85, 120 and 160 degrees C during 1, 2 and 4 hours. Degradation of the p-n structure after every annealing step was estimated on changes of the Hall coefficient magnetic field dependence. It was revealed that degradation of the p- n structure took place due to progressive thickness decreasing of n-layer through Hg passing to intersites and vacancy creation. The critical temperature during technology steps is equal about 100 degrees C.

Citation Download Citation

Igor I. Izhnin "Temperature stability of the IBM-formed Cd_xHg_1-xTe p-n structure", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368411

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