Transport properties of p-Hg1-xCdxTe (x = 0.22)

Pavel Moravec; Roman Grill; Jan Franc; Pavel Hoeschl; Eduard Belas

doi:10.1117/12.368373

4 November 1999 Transport properties of p-Hg_1-xCd_xTe (x = 0.22)

Pavel Moravec, Roman Grill, Jan Franc, Pavel Hoeschl, Eduard Belas

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368373
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

Measurements of the Hall coefficient and conductivity of not intentionally doped p-Hg_1-xCd_xTe samples at temperatures 4.2-300K are reported. A theoretical approximation of experimental data based on a solution of the electronic Boltzmann transport equation and subsequent fitting procedure is done giving a very good agreement between the experiment and calculation. The measurements are analyzed in the full temperature interval simultaneously using the same relevant model parameters in the doping, intrinsic and intermediate region as well. The three- acceptor-level model for one divalent acceptor and one monovalent residual acceptor is discussed. The precision of model parameters determined by this way is analyzed. A novel method to check the sample homogeneity is suggested.

Citation Download Citation

Pavel Moravec, Roman Grill, Jan Franc, Pavel Hoeschl, and Eduard Belas "Transport properties of p-Hg_1-xCd_xTe (x = 0.22)", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368373

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