Paper
4 November 1999 Q-switching of diode-end-pumped Nd:YVO4 laser with GaAs output coupler
Jianhui Gu, Feng Zhou, Siu Chung Tam, Yee Loy Lam, Chan Hin Kam, Wenjie Xie, Tuan-Kay Lim, Kah Tau Wan
Author Affiliations +
Proceedings Volume 3898, Photonic Systems and Applications in Defense and Manufacturing; (1999) https://doi.org/10.1117/12.368473
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
To improve the compactness of Q-switched diode-pumped solid- state lasers, a passively Q-switched diode-end-pumped Nd:YVO4 laser was constructed using undoped and uncoated GaAs wafers as saturable absorbers as well as output couplers. GaAs wafers with two different thicknesses, 625 micrometers and 500 micrometers , were employed and their corresponding experimental result were compared. The result were also compared with those obtained with an active A-O Q-switch with similar cavity configuration and pumping condition. It is found that the Fabry-Perot effect of the GaAs wafer played an important role in shortening the Q-switched pulses and stabilizing the laser operation. The performance of passive Q-switching using the GaAs wafer with Fabry-Perot effect was better than that of both the passive Q-switching without Fabry-Perot effect and the active A-O Q-switching.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianhui Gu, Feng Zhou, Siu Chung Tam, Yee Loy Lam, Chan Hin Kam, Wenjie Xie, Tuan-Kay Lim, and Kah Tau Wan "Q-switching of diode-end-pumped Nd:YVO4 laser with GaAs output coupler", Proc. SPIE 3898, Photonic Systems and Applications in Defense and Manufacturing, (4 November 1999); https://doi.org/10.1117/12.368473
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KEYWORDS
Gallium arsenide

Semiconducting wafers

Q switches

Output couplers

Q switched lasers

Q switching

Semiconductor lasers

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