Paper
3 March 2000 Laser damage of silicon oxynitride mirrors: comparison of theory and experiement
Gerry A. Gurtman, Russell S. Wilson, Mel Rice, Keith L. Lewis, M. Corbett, James A. Sprague, Jacob Grun, Gracie Davis
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Abstract
The correspondence between theory and experiment is frequently an issue of debate in the area of laser damage. This paper sets out to assess the ability of analytical techniques to predict the out-of-band laser damage thresholds of thin films in a spectral regime where the films are strongly absorbing. The study was cantered on a group of silicon oxynitride dielectric mirrors fabricated for use at 532 nm using samples deposited by microwave plasma deposition, magnetron sputtering and ion-assisted deposition on sapphire substrate. Laser damage measurements were carried out using a pulsed laser at 10.6 micrometers , where the silicon oxynitride is highly absorbing. The laser- material interaction was modeled using a 1D, coupled radiation, thermal diffusion code which calculated the degree of temperature rise as a function of fluence using known optical constants for the materials. Melt thresholds were predicted to occur at fluences of 1-1.3 J/cm2, closely matching the experimental data. Damage sites at higher fluences had a characteristic ripple morphology with approximately 3.5 micrometers spacing. A comparison is made with behavior found at 532 and 1064 nm.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerry A. Gurtman, Russell S. Wilson, Mel Rice, Keith L. Lewis, M. Corbett, James A. Sprague, Jacob Grun, and Gracie Davis "Laser damage of silicon oxynitride mirrors: comparison of theory and experiement", Proc. SPIE 3902, Laser-Induced Damage in Optical Materials: 1999, (3 March 2000); https://doi.org/10.1117/12.379343
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KEYWORDS
Coating

Mirrors

Silicon

Laser damage threshold

Laser induced damage

Absorption

Refractive index

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