Resonant-cavity LEDs at 655- and 880-nm wavelengths

Pekko Sipilae; Mika J. Saarinen; Ville Vilokkinen; Seppo Orsila; Petri Melanen; Pekka Savolainen; Mika Toivonen; Mihail M. Dumitrescu; Markus Pessa

doi:10.1117/12.382816

17 April 2000 Resonant-cavity LEDs at 655- and 880-nm wavelengths

Pekko Sipilae, Mika J. Saarinen, Ville Vilokkinen, Seppo Orsila, Petri Melanen, Pekka Savolainen, Mika Toivonen, Mihail M. Dumitrescu, Markus Pessa

Author Affiliations +

Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382816
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Monolithic top-emitting resonant cavity light-emitting diodes (RCLEDs) have been fabricated by solid-source MBE. The RCLEDs in the 650-nm range, with modulation bandwidths exceeding 180 MHz, are possible low-cost transmitter candidates for systems using plastic optical fibers (POFs), such as IEEE-1394 at 100 Mb/s and 200 Mb/s and ATM at 155 Mb/s. Modulation bandwidth of greater than 120 MHz and light power of 2 mW (cw) have been achieved for ^(phi )84-micrometer devices driven at a 40 mA current. Accelerated aging tests for 27,500 device-hours indicate no degradation in output power. A variation in device temperature significantly modifies the far-field pattern and thus the fiber coupling efficiency, due to a cavity detuning effect. The effects of detuning and the temperature and bias dependencies of the devices are investigated. The 880-nm RCLEDs have a maximum output power of 25 mW. Applications include open-air optical communication systems, collision avoidance and measurement systems.

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Pekko Sipilae, Mika J. Saarinen, Ville Vilokkinen, Seppo Orsila, Petri Melanen, Pekka Savolainen, Mika Toivonen, Mihail M. Dumitrescu, and Markus Pessa "Resonant-cavity LEDs at 655- and 880-nm wavelengths", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); https://doi.org/10.1117/12.382816

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