Cavity solitons in semiconductor devices

Massimo Brambilla; Luigi A. Lugiato; Tommaso Maggipinto; Lorenzo Spinelli; Giovanna Tissoni

doi:10.1117/12.391425

14 July 2000 Cavity solitons in semiconductor devices

Massimo Brambilla, Luigi A. Lugiato, Tommaso Maggipinto, Lorenzo Spinelli, Giovanna Tissoni

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391425
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Cavity solitons appear as bright spots in the transverse intensity profile. They are similar to spatial solitons, but arise in dissipative systems. Here we consider a broad area vertical cavity resonator, driven by an external coherent field, at room temperature. The active material is constituted either by bulk GaAs, or by a Multiple Quantum Well GaAs/AlGaAs structure (MQW). A general model valid for both configurations is presented and a set of nonlinear dynamical equations is derived. The linear stability analysis of the homogeneous steady states is performed in a general form, holding for the two cases. Then, the nonlinear susceptibilities are specified: in the bulk case, we basically work in the free-carrier approximation, with some phenomenological corrections, such as the Urbach tail and the band-gap renormalization. For the bulk case, some numerical results concerning spatial pattern formation and cavity solitons are given. In the MQW case, on the contrary, we derive a full many-body theory, with the Coulomb enhancement treated in the Pade approximation.

Citation Download Citation

Massimo Brambilla, Luigi A. Lugiato, Tommaso Maggipinto, Lorenzo Spinelli, and Giovanna Tissoni "Cavity solitons in semiconductor devices", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391425

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