Paper
19 April 2000 InP photoreceiver OEICs for high-speed optical transmission systems
G. G. Mekonnen, W. Schlaak, Heinz-Gunter Bach, Th. Engel, Carsten Schramm, Andreas Umbach
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Abstract
Photoreceivers based on InP are becoming increasingly important for 40 Gbit/s telecommunication systems operating at the wavelength of 1.55 micrometers . Due to the monolithic integration, they are advantageous in respect of high-speed performance, small size and cost saving in high-frequency packaging. Research groups worldwide are engaged in developing such OEIC's, with varying architectures and types of the components. Our broadband photoreceiver OEIC consists of a waveguide-integrated GaInAs p-i-n photodetector and a distributed amplifier. The 5*20 micrometers sized photodetectors, with a responsivity of 0.4 A/W, reveal a 3 dB cut-off frequency of 70 GHz. The electrical distributed amplifier is made of our high-electron mobility transistors. The HEMT devices with gate lengths of 0.25 micrometers exhibit cut-off frequencies fT and fmax of up to 100 and 250 GHz, respectively. The integrated photoreceivers are characterized on-after using a heterodyne-measurement setup and finally packaged into modules for system experiments. On recently fabricated wafers, the receivers show a bandwidth of 40 GHz, whereas the amplifiers alone even exhibit values as high as 43 GHz, with gain ripple less than 1 dB.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. G. Mekonnen, W. Schlaak, Heinz-Gunter Bach, Th. Engel, Carsten Schramm, and Andreas Umbach "InP photoreceiver OEICs for high-speed optical transmission systems", Proc. SPIE 3950, Optoelectronic Integrated Circuits IV, (19 April 2000); https://doi.org/10.1117/12.382147
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KEYWORDS
Photonic integrated circuits

Waveguides

Optical amplifiers

Field effect transistors

Photodetectors

Receivers

Photodiodes

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