Coulomb interactions and the effect of compensating lens aberration in projection electron-beam systems

Bo Wu; Andrew R. Neureuther

doi:10.1117/12.390110

21 July 2000 Coulomb interactions and the effect of compensating lens aberration in projection electron-beam systems

Bo Wu, Andrew R. Neureuther

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390110
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Studies show that Coulomb interactions in the crossover region contribute significantly to the beam blur on the wafer at high beam currents. We increased the crossover size using a pair of compensating lens aberrations. Up to a 20% spot size reduction has been achieved at 20 (mu) A beam current and 1.5 mR convergence angle in simulation. We further compare interbeamlet electron interactions with intra-beamlet electron interactions in the column for different column configurations. Results also show that the stochastic blur due to Coulomb interactions from different beamlets can be combined on a root mean square basis. This result has been used to evaluate and compare the blur contribution from the stochastic interaction and space charge effect.

Citation Download Citation

Bo Wu and Andrew R. Neureuther "Coulomb interactions and the effect of compensating lens aberration in projection electron-beam systems", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390110

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