Sub-10-nm electron-beam lithography with sub-10-nm overlay accuracy

Kenji Yamazaki; Mohammad S.M. Saifullah; Hideo Namatsu; Kenji Kurihara

doi:10.1117/12.390084

21 July 2000 Sub-10-nm electron-beam lithography with sub-10-nm overlay accuracy

Kenji Yamazaki, Mohammad S.M. Saifullah, Hideo Namatsu, Kenji Kurihara

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390084
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Stable sub-10-nm lithography was achieved using a 100-kV electron-beam nanolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al₂O₃ resist, and even at the corner of a wide field of several- hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in mean + 2 (sigma) were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high- performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating a nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single- electron devices.

Citation Download Citation

Kenji Yamazaki, Mohammad S.M. Saifullah, Hideo Namatsu, and Kenji Kurihara "Sub-10-nm electron-beam lithography with sub-10-nm overlay accuracy", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390084

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