Encapsulated inorganic resist technology

Theodore H. Fedynyshyn; Scott P. Doran; Michele L. Lind; I. Sondi; Egon Matijevic

doi:10.1117/12.388348

23 June 2000 Encapsulated inorganic resist technology

Theodore H. Fedynyshyn, Scott P. Doran, Michele L. Lind, I. Sondi, Egon Matijevic

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388348
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Resolution in traditional single layer organic resists has been limited by the inability to image at aspect ratios (resist height to image width) of much greater than 3:1. Unless plasma etch selectivity increases several fold (an unlikely event with organic based resists) single layer resist chemistry will cease to be practical at sub-100-nm resolution. Multilayer resist schemes offer the capability of increased aspect ratio, but they add to the process complexity and cost. Encapsulated inorganic materials as resist components will be ultimately capable of sub-100-nm resolution with sufficient plasma etch selectivity. The encapsulated inorganic resist technology (EIRT) resist will act as a single layer hard mask compatible with existing resist processing steps. Material evaluation showed that encapsulated inorganic materials have properties compatible with current resist technology. Lithographic evaluations have been performed with electron beam, and with 248 nm and 157 nm projection systems. It was shown that 150-nm imaging is possible with resists having high inorganic material content. In all cases the EIRT resists have shown lithographic performance equivalent to control resists containing no SiO₂. Reactive ion etch (RIE) etch rates in oxygen and chlorine plasmas are significantly reduced for resists containing SiO₂ nanoparticles as compared to a commercial resist providing a proof of concept that EIRT resists can dramatically improved plasma etch rates.

Citation Download Citation

Theodore H. Fedynyshyn, Scott P. Doran, Michele L. Lind, I. Sondi, and Egon Matijevic "Encapsulated inorganic resist technology", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388348

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