Accuracy of diffused aerial image model for full-chip-level optical proximity correction

Jee-Suk Hong; Hee-Bom Kim; Hyoung-Soon Yune; Chang-Nam Ahn; Young-Mo Koo; Ki-Ho Baik

doi:10.1117/12.388936

5 July 2000 Accuracy of diffused aerial image model for full-chip-level optical proximity correction

Jee-Suk Hong, Hee-Bom Kim, Hyoung-Soon Yune, Chang-Nam Ahn, Young-Mo Koo, Ki-Ho Baik

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388936
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Recently, the miniaturization of the design rule of memory devices pushes the minimum feature sizes down to sub- wavelengths of the exposure tools. The design of a memory device comprises not only the dense patterns with critical small size in the cell region but also the random patterns in the peripheral region; the latter also need sub- wavelength lithography technology as well as the former. And the optical proximity correction (OPC) has been strongly required for the random patterns in the peripheral region where the same energy is exposed as in the cell region. Therefore, the high accuracy of simulation model used in the OPC is necessary for the full chip OPC tools. However traditional aerial image simulation has a limitation to the application due to its lack of accuracy because it does not take into account a resist process. We introduced novel lithography simulation model in 1998, which describes resist process by diffusion and chemically amplification function.

Citation Download Citation

Jee-Suk Hong, Hee-Bom Kim, Hyoung-Soon Yune, Chang-Nam Ahn, Young-Mo Koo, and Ki-Ho Baik "Accuracy of diffused aerial image model for full-chip-level optical proximity correction", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388936

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