Paper
5 July 2000 Advances in 193-nm lithography tools
Daniel R. Cote, David Ahouse, Daniel N. Galburt, Hilary G. Harrold, Justin Kreuzer, Mike Nelson, Mark L. Oskotsky, Geoffrey O'Connor, Harry Sewell, David M. Williamson, John D. Zimmerman, Richard Zimmerman
Author Affiliations +
Abstract
The never ending drive for faster and denser ICS has reached a staggering pace is attributable to the economics of the semiconductor industry and competition among chip manufacturers. This quest may be approached in different ways. A common approach is to continue to push the 248nm wavelength lithographic tools. This paper reviews the status of 193nm lithography with respect to its production worthiness, capability and extendibility when compared to 248nm systems. Key issues such as cost of ownership and process maturity are discussed. Analytical results, system analyses and recent lithographic results are presented. Conclusions are offered with respect to the logical timing of the insertion of 193nm lithography tools into semiconductor manufacturing.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel R. Cote, David Ahouse, Daniel N. Galburt, Hilary G. Harrold, Justin Kreuzer, Mike Nelson, Mark L. Oskotsky, Geoffrey O'Connor, Harry Sewell, David M. Williamson, John D. Zimmerman, and Richard Zimmerman "Advances in 193-nm lithography tools", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389043
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KEYWORDS
Lithography

Semiconducting wafers

193nm lithography

Reticles

Distortion

Combined lens-mirror systems

Binary data

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