In-situ measurement of lens aberrations

Nigel R. Farrar; Adlai H. Smith; Daniel R. Busath; Dennis Taitano

doi:10.1117/12.389021

5 July 2000 In-situ measurement of lens aberrations

Nigel R. Farrar, Adlai H. Smith, Daniel R. Busath, Dennis Taitano

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389021
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Linewidth control across an exposure field is becoming increasingly challenging as design rules shrink. Contributions to linewidth variation can arise from the reticle, the exposure tool and the resist process. For the exposure system, errors may originate from the illuminator ste-up, the projection lens aberrations using a new reticle and measurement technique. The technique uses a special reticle, which converts wavefront phase errors to displacements on the wafer. These offsets can be measured using conventional overlay tools with greater speed and accuracy than SEM measurements of small linewidths. Reconstruction of the wavefront using this data provides a more reliable in-situ characterization of aberrations.

Citation Download Citation

Nigel R. Farrar, Adlai H. Smith, Daniel R. Busath, and Dennis Taitano "In-situ measurement of lens aberrations", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389021

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