Paper
11 July 2000 Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
ChenKe Shu, WenHsiung Lee, YungChung Pan, HuaiYing Huang, HsiaoHui Chen, WenHsiung Chen, WeiKuo Chen, MingChih Lee
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Abstract
The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue- shift revealing characteristic of donor-acceptable pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compound effects of differential DAP population and recombination rates and uneven acceptor distribution.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
ChenKe Shu, WenHsiung Lee, YungChung Pan, HuaiYing Huang, HsiaoHui Chen, WenHsiung Chen, WeiKuo Chen, and MingChih Lee "Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392182
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KEYWORDS
Gallium nitride

Luminescence

Magnesium

Vapor phase epitaxy

Distortion

Electrons

Doping

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