Observation of self-assembled InAs/GaAs quantum dot structure with temperature-dependent photoluminescence and measurement of electrical characteristics

ShiangFeng Tang; Shih-Yen Lin; YuCheng Liao; Si-Chen Lee; Ya-Tung Cherng

doi:10.1117/12.392131

11 July 2000 Observation of self-assembled InAs/GaAs quantum dot structure with temperature-dependent photoluminescence and measurement of electrical characteristics

ShiangFeng Tang, Shih-Yen Lin, YuCheng Liao, Si-Chen Lee, Ya-Tung Cherng

Author Affiliations +

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392131
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

Self-assembled quantum dot has been realized in different optical-electric material systems and different growth techniques using Stranski-Krastanow growth mode [1]. The optical properties of quantum dots are of physical interest due to the experimental investigation. The theoretical predictions of quantum dot device have been well verified [2]. In the article, we studied the temperature dependent electrical and optical properties [2,3] of quantum dot under normal incidence. From the measurement results, we found the three-dimensional confinement of QD structure and the inter- confined state [4-6].

Citation Download Citation

ShiangFeng Tang, Shih-Yen Lin, YuCheng Liao, Si-Chen Lee, and Ya-Tung Cherng "Observation of self-assembled InAs/GaAs quantum dot structure with temperature-dependent photoluminescence and measurement of electrical characteristics", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392131

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