Computer simulation of Nb2O5/SiO2 sputtering process for narrow-band optical filter

Mike Xu Ouyang; L. D. Kinney; Emmanuel C. Onyiriuka

doi:10.1117/12.408294

29 November 2000 Computer simulation of Nb₂O₅/SiO₂ sputtering process for narrow-band optical filter

Mike Xu Ouyang, L. D. Kinney, Emmanuel C. Onyiriuka

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408294
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Sputter deposition process conditions for dielectric metal oxide films was simulated by SIMSPUD^TM (Simulation of Sputtered Distributions). Collision cross-sections of Nb and Si were found to be 50 angstroms² and 55 angstroms² respectively by pinhole experiment and simulation. Film thickness distributions of Nb and Si films vs their oxide counterparts (Nb₂O₅ vs SiO₂) showed that the deposition rate ratio of SiO₂ to Si is 2.03 - 2.05:1 while Nb to Nb₂O₅ is 1.76 - 1.77:1. It was determined that the current density distribution and oxygen flow for reactive sputtering had great influence on film stoichiometry and thickness. It was also found that the ion source flattened the oxide film thickness. SIMSPUD was shown to be a desirable tool for new product development and as such could be beneficial in the design of the next generation PVD system.

Citation Download Citation

Mike Xu Ouyang, L. D. Kinney, and Emmanuel C. Onyiriuka "Computer simulation of Nb₂O₅/SiO₂ sputtering process for narrow-band optical filter", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408294

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