Growth of n-type ZnTe films and formation of ohmic contacts

Kazuki Hayashida; Mitsuhiro Nishio; Yoshiaki Mitsuishi; Qixin Guo; Hiroshi Ogawa

doi:10.1117/12.408444

29 November 2000 Growth of n-type ZnTe films and formation of ohmic contacts

Kazuki Hayashida, Mitsuhiro Nishio, Yoshiaki Mitsuishi, Qixin Guo, Hiroshi Ogawa

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408444
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

N-type ZnTe films with resistivities of 2 and 13 (Omega) cm have been grown by metalorganic vapor phase epitaxial technique using triethylaluminum. The photoluminescence spectra from these films exhibit strong excitonic emission and donor-acceptor-pair emission associated with Al donor and very weak deep emission band due to the Zn vacancy and Al donor complex. We have examined various metals (Al, Mg and W) and an alloy (In-Hg) for ohmic contacts to n-type ZnTe. From the current-voltage characteristics between two contacts at room temperature for above-mentioned metals and alloy, it has been found that acceptable contacts are formed using W and In-Hg alloy. The best contact among the investigated electrodes is achievable by using W electrode.

Citation Download Citation

Kazuki Hayashida, Mitsuhiro Nishio, Yoshiaki Mitsuishi, Qixin Guo, and Hiroshi Ogawa "Growth of n-type ZnTe films and formation of ohmic contacts", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408444

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