Infrared photoluminescence characterization of HgCdTe film

Yong Chang; Junhao Chu; Rongbin Ji; X. G. Wang; Gensheng Huang; J. F. Li; Li He; Dingyuan Tang

doi:10.1117/12.408425

29 November 2000 Infrared photoluminescence characterization of HgCdTe film

Yong Chang, Junhao Chu, Rongbin Ji, X. G. Wang, Gensheng Huang, J. F. Li, Li He, Dingyuan Tang

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408425
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

The Fourier transform and double modulation Fourier transform photoluminescence measurements were performed on HgCdTe films from liquid helium temperature to room temperature in the infrared band to 10 micrometers where the influence from room temperature background blackbody emission is very strong. From the band to band transition photoluminescence peak, which dominated in HgCdTe films with the small cadmium composition, the cadmium composition, crystal-quality-related band tail energy, and the active energy of the non-radiative Shockly-Read center, are obtained. The photoluminescence characterization method is also used to investigate the intentionally doped impurity behavior in HgCdTe. The amphoteric impurity behavior of As implanted in HgCdTe is discovered with the donor and acceptor energy level of 8.5 meV and 31.5 meV, respectively. The Ag impurity level of 70 meV in MBE HgCdTe is also found.

Citation Download Citation

Yong Chang, Junhao Chu, Rongbin Ji, X. G. Wang, Gensheng Huang, J. F. Li, Li He, and Dingyuan Tang "Infrared photoluminescence characterization of HgCdTe film", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408425

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KEYWORDS

Luminescence

Mercury cadmium telluride

Crystals

Silver

Arsenic

Infrared radiation

Cadmium

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