Optical and electrical properties of type III HgTe/Hg1-xCdxTe heterostructures

Charles R. Becker; X. C. Zhang; K. Ortner; V. Latussek; A. Pfeuffer-Jeschke

doi:10.1117/12.408448

29 November 2000 Optical and electrical properties of type III HgTe/Hg_1-xCd_xTe heterostructures

Charles R. Becker, X. C. Zhang, K. Ortner, V. Latussek, A. Pfeuffer-Jeschke

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408448
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

By means of an optical investigation involving the envelope function approximation using the full 8 X 8 Kane Hamiltonian, it has been demonstrated that the valence band is primarily responsible for the separation between the H1- E1 and L1-E1 intersubband transition energies of semiconducting HgTe/Hg_1-xCd_xTe superlattices with a normal band structure. This results in an unequivocal determination of the valence band offset between HgTe and CdTe, (Lambda) , which is 570 +/- 60 meV at 5 K for both the (001) and the (112)B orientations. In order to correctly predict the temperature dependence of both intersubband transition energies, the following is required: (Lambda) is also temperature dependent according to d(Lambda) /dT equals -0.40 +/- 0.04 meV/K; the heavy hole effective mass has a significant temperature dependence; and the energy gap E_g(HgTe, 300 K)equals -160 +/- meV which is appreciably lower than the extrapolated values found in the literature.

Citation Download Citation

Charles R. Becker, X. C. Zhang, K. Ortner, V. Latussek, and A. Pfeuffer-Jeschke "Optical and electrical properties of type III HgTe/Hg_1-xCd_xTe heterostructures", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408448

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