Paper
29 November 2000 Optical and electrochemical properties of sol-gel-deposited tantalum pentoxide thin films
Qinyuan Zhang, Jun Shen, Guangming Wu, Bin Zhou, Junxia Lu, S. M. Attia, Zhongsheng Deng, Jue Wang
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408490
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Sol-gel spin-coating technique was applied to produce tantalum pentoxide thin films. Pseudo-ternary phase diagrams were used to outline the sol-solution stability and the optimal Ta2O5 thin films formation regions of Ta(OC2H5)5-C2H5OH- CH3COOH-H2O system. Forbidden band gap of Ta2O5 thin film was calculated and found to be Eg equals 3.7 ev. Room temperature cyclic voltammetric measurements clearly revealed a protonic conductor behavior for Ta2O5 thin films.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qinyuan Zhang, Jun Shen, Guangming Wu, Bin Zhou, Junxia Lu, S. M. Attia, Zhongsheng Deng, and Jue Wang "Optical and electrochemical properties of sol-gel-deposited tantalum pentoxide thin films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408490
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KEYWORDS
Thin films

Tantalum

Coating

Sol-gels

Electrodes

Refractive index

Absorption

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