Optical and electronic characteristics for of thin film

Fanying Meng; Rongqiang Cui; Tietun Sun

doi:10.1117/12.408428

29 November 2000 Optical and electronic characteristics for of thin film

Fanying Meng, Rongqiang Cui, Tietun Sun

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408428
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

CdTe thin films are obtained by on glass substrates by vacuum vapor deposition. This work mainly presents the optical and electrical characteristics of the CdTe films by varying stoichiometry of Cd and Te, doping-In and thermal treatment with N₂. The variation of band gap and absorption coefficient is studied as well as the resistivity. The results show that the undoped-In samples have very high resistivity on which thermal treatment has little effect, which proves that the undoped CdTe thin film is high resistivity semiconductor. On the other hand, the resistivity of the doped-In samples decreases after thermal treatment. In general, the optical and electrical characteristics of the prepared CdTe thin film can be improved by proper doping and thermal treatment.

Citation Download Citation

Fanying Meng, Rongqiang Cui, and Tietun Sun "Optical and electronic characteristics for of thin film", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408428

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