Photoinduced phenomena in polysilane films

Yoshikazu Nakayama; Hiroyuki Inagi; Tatsuo Fujii; Lujun Pan

doi:10.1117/12.408362

29 November 2000 Photoinduced phenomena in polysilane films

Yoshikazu Nakayama, Hiroyuki Inagi, Tatsuo Fujii, Lujun Pan

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408362
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

The photoinduced phenomena involving the photoscission of (sigma) bonds and photocreation of electronic defects have been studied systematically in films of (MeSiPh)_n, (n- Hex₂Si)_n, (c-HeSiMe)_n and (n-pentyl₂Si)_n as different polysilanes with and without phenyl substituents. The results have revealed the followings. A photoscission model established for (MeSiPh)_n, where the photoscission cross-section is larger for longer segments and the reaction is thermally activated with the activation energies being distributed in a shape given by a combination with two exponential functions, is consistent with the processes in other polysilanes. The photoscission of (sigma) bonds creates defects to decrease the photoluminescence for polysilanes with phenyl substituents and some centers to enhance the photoluminescence for (c-HexSiMe)_n and (n- pentyl₂Si)_n. The photoscission of (sigma) bonds occurs preferably at edges of the segments in (c-Hex₂Si)_n and at the inside of the segments for other three polysilanes. The orientation of (MeSiPh)_n is effective to decrease the photoscission cross-section.

Citation Download Citation

Yoshikazu Nakayama, Hiroyuki Inagi, Tatsuo Fujii, and Lujun Pan "Photoinduced phenomena in polysilane films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408362

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