Preparation of PZT thick films by 0-3 composite method

Xiyun He; Aili Ding; Pingsun Qiu; Weigen Luo

doi:10.1117/12.408334

29 November 2000 Preparation of PZT thick films by 0-3 composite method

Xiyun He, Aili Ding, Pingsun Qiu, Weigen Luo

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408334
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

PbZr_0.40Ti_0.60O₃ (PZT) thick films are prepared on Pt/Ti/SiO₂/Si substrate by a sol gel based 0 - 3 composite method. The influence of processing variable including powder characteristics, solvents feature and annealing condition is investigated. Microstructure and electric property of PZT thick films are examined and analyzed. Optimum parameters of process are suggested. PZT thick film of 10 micrometers thickness with excellent ferroelectric and dielectric properties has been obtained (Pr 24 (mu) C/cm², (epsilon) _r 680 at 1 kHz.

Citation Download Citation

Xiyun He, Aili Ding, Pingsun Qiu, and Weigen Luo "Preparation of PZT thick films by 0-3 composite method", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408334

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