Properties of oriented (Ba,Sr)TiO3 thin films

Wen Ding; Zhongyan Meng

doi:10.1117/12.408351

29 November 2000 Properties of oriented (Ba,Sr)TiO₃thin films

Wen Ding, Zhongyan Meng

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408351
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Ba_0.7Sr_0.3TiO₃ thin film/Ba_0.5Sr_0.5TiO₃ buffer layer/Pt/Ti/SiO₂/Si(100) multilayer structures were investigated. The buffer layer was obtained from a highly dilute solution (0.1 M) by sol-gel technique through rapid thermal process. X-ray diffraction patterns show that the upper main BST film is preferential oriented and good in-plane relationship of BST(111)//Pt(111). After using the buffer layer, the leakage current was reduced two orders of magnitude. The dielectric properties are much better than those of the thin films without buffer layer at the same thickness of 150 nm.

Citation Download Citation

Wen Ding and Zhongyan Meng "Properties of oriented (Ba,Sr)TiO₃thin films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408351

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