Paper
21 November 2000 Evaluation of NH4F/H2O2 effectiveness as a surface passivation agent for Cd1-xZnxTe crystals
Gomez W. Wright, Ralph B. James, Douglas Chinn, Bruce Andrew Brunett, Richard W. Olsen, John M. Van Scyoc III, W. Miles Clift, Arnold Burger, Kaushik Chattopadhyay, Detang T. Shi, Robert Cam Wingfield
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Abstract
Various passivating agents that reduce the surface leakage current of CZT crystals have been previously reported. In none of the studies, NH4F/H2O2 was identified as a promising passivation agent for CZT. We now present a study that includes the effect of NH4F/H2O2 treatment on the surface properties and detector performance. An elemental depth profile was obtained via Auger Electron Spectroscopy. Furthermore, X-ray Photoelectron Spectroscopy acquired at different processing times to identify the chemical states of the elemental species that composed the dielectric layer. It was found that the NH4F/H2O2 surface passivation significantly improved the sensitivity and energy resolution of CZT detectors. Furthermore, the NH4F/H2O2 treatment did not attack the Au electrodes, which eliminated the need to protect the contacts in the detector fabrication process.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gomez W. Wright, Ralph B. James, Douglas Chinn, Bruce Andrew Brunett, Richard W. Olsen, John M. Van Scyoc III, W. Miles Clift, Arnold Burger, Kaushik Chattopadhyay, Detang T. Shi, and Robert Cam Wingfield "Evaluation of NH4F/H2O2 effectiveness as a surface passivation agent for Cd1-xZnxTe crystals", Proc. SPIE 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II, (21 November 2000); https://doi.org/10.1117/12.407594
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Cited by 25 scholarly publications.
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KEYWORDS
Sensors

Dielectrics

Oxides

Gold

Resistance

Semiconductors

Photoresist materials

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