Characterization of deep Si etch profiles formed by atmospheric downstream plasma

Igor Bagriy; Oleg Siniaguine

doi:10.1117/12.396477

25 August 2000 Characterization of deep Si etch profiles formed by atmospheric downstream plasma

Igor Bagriy, Oleg Siniaguine

Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000) https://doi.org/10.1117/12.396477
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States

Abstract

A new dry etch process that is base don Atmospheric Downstream Plasma (ADP) technology has many applications for MEMS manufacturing. The atmospheric-pressure thermal plasma is created by a DC discharge through a stream of inert gas flowing between electrodes in the process chamber. The reactant gas stream flows through the plasma region, where it is decomposed into constituent monatomic gas atoms by the high temperature of the plasma. The chemical reaction of silicon with electrically neutral activated fluorine gas results in isotropic silicon removal with etch rates significantly higher than in vacuum plasmas. The results are deep ADP silicon etching using aluminum mask layers with holes ranging in size from 20 to 600 micrometers are presented. Evaluation parameters include etch rate, wafer temperature, hole depth and width, etch profile, and microloading effects. Mechanism and models os isotropic dep ADP silicon etching are discussed. As a result, design rules for masks used in bulk silicon etching using ADP are proposed.

Citation Download Citation

Igor Bagriy and Oleg Siniaguine "Characterization of deep Si etch profiles formed by atmospheric downstream plasma", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); https://doi.org/10.1117/12.396477

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