Pseudomorphic InxGa1-xAs/InyAl1-yAs high-electron mobility transistor structures grown by solid source molecular beam epitaxy

Hai Qun Zheng; Kaladhar Radhakrishnan; Soon Fatt Yoon; Geok Ing Ng

doi:10.1117/12.405394

24 October 2000 Pseudomorphic In_xGa_1-xAs/In_yAl_1-yAs high-electron mobility transistor structures grown by solid source molecular beam epitaxy

Hai Qun Zheng, Kaladhar Radhakrishnan, Soon Fatt Yoon, Geok Ing Ng

Author Affiliations +

Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405394
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

We report on the optimization of InP-based In_xGa_1-xAs/In_yAl_1-yAs pseudomorphic high electron mobility transistor (PHEMT) structures to achieve the highest possible 2D electron gas density and mobility. Using our optimized growth conditions, high 2DEG concentration and mobility products have been obtained. The single-side-doped PHEMT structure with a (delta) -doping concentration of 6 by 10¹² cm^-2 gives a 2DEG sheet density of 3.93 by 10¹² cm^-2 and a top (delta) -doping concentration of 5 by 10¹² cm^-2 gives a 2DEG sheet density of 4.57 by 10¹² cm^-2 with a mobility of 10900 cm²/V.s. The structural properties of PHEMT structures are characterized by XRD measurements. Preliminary device results are also reported.

Citation Download Citation

Hai Qun Zheng, Kaladhar Radhakrishnan, Soon Fatt Yoon, and Geok Ing Ng "Pseudomorphic In_xGa_1-xAs/In_yAl_1-yAs high-electron mobility transistor structures grown by solid source molecular beam epitaxy", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405394

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