Paper
14 May 2001 Current crowding and optical saturation effects in GaInN/GaN LEDs grown on insulating substrates
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Abstract
Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating substrates is analyzed. A model developed reveals an exponential decrease of the current density with distance from the mesa edge. Devices with stripe- shaped mesa geometry display current crowding and a saturation of the optical output power at high injection currents. It is shown that the optical power saturation depends on the device geometry. It is also shown that saturation is less pronounced in LEDs employing a ring-shaped mesa geometry, which reduces current crowding, as compared to the conventional square- shaped mesa geometry.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoyun Guo, E. Fred Schubert, and Juergen Jahns "Current crowding and optical saturation effects in GaInN/GaN LEDs grown on insulating substrates", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); https://doi.org/10.1117/12.426843
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KEYWORDS
Light emitting diodes

Gallium nitride

Dielectrics

Sapphire

Cladding

Diodes

Photomicroscopy

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