Dynamics of spontaneous and stimulated emissions in GaN-based semiconductors

Yoichi Kawakami; Kunimichi Omae; Akio Kaneta; Koichi Okamoto; Tomoaki Izumi; Shin Saijou; Kenichi Inoue; Yukio Narukawa; Takashi Mukai; Shigeo Fujita

doi:10.1117/12.424742

23 April 2001 Dynamics of spontaneous and stimulated emissions in GaN-based semiconductors

Yoichi Kawakami, Kunimichi Omae, Akio Kaneta, Koichi Okamoto, Tomoaki Izumi, Shin Saijou, Kenichi Inoue, Yukio Narukawa, Takashi Mukai, Shigeo Fujita

Author Affiliations +

Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001) https://doi.org/10.1117/12.424742
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Recombination dynamics of spontaneous and stimulated emissions have been assessed in InGaN-based light emitting diodes (LEDs) and laser diodes (LDs), by employing time- resolved photoluminescence and pump and probe spectroscopy. As for an In_0.02Ga_0.98N-ultraviolet-LED, excitons are weakly localized by 15 meV at low temperature, but they become almost free at room temperature. It was found that addition of small amount of In results in the reduction of nonradiative recombination centers originating from point defects. The internal electric field does exist in InGaN active layers, and induces a large modification of excitonic transitions. However, it alone does not explain the feature of spontaneous emission observed in an In_0.3Ga_0.7N- blue-LED such as an anomalous temperature dependent of peak energy, almost temperature independence of radiative lifetimes and mobility-edge type behavior, indicating an important role of exciton localization.

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Yoichi Kawakami, Kunimichi Omae, Akio Kaneta, Koichi Okamoto, Tomoaki Izumi, Shin Saijou, Kenichi Inoue, Yukio Narukawa, Takashi Mukai, and Shigeo Fujita "Dynamics of spontaneous and stimulated emissions in GaN-based semiconductors", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); https://doi.org/10.1117/12.424742

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