Switch-on transient behavior in low-temperature polysilicon thin film transistors

Nathan Bavidge; Mauro Boero; Piero Migliorato; Tatsuya Shimoda

doi:10.1117/12.424859

30 April 2001 Switch-on transient behavior in low-temperature polysilicon thin film transistors

Nathan Bavidge, Mauro Boero, Piero Migliorato, Tatsuya Shimoda

Proceedings Volume 4295, Flat Panel Display Technology and Display Metrology II; (2001) https://doi.org/10.1117/12.424859
Event: Photonics West 2001 - Electronic Imaging, 2001, San Jose, CA, United States

Abstract

We report upon the measurement and simulation of the switch- on transient of polycrystalline silicon tin film transistors. The measurement of the switch-on transient reveals an unexpectedly long transient that cannot be explained by the theory adopted for single crystal silicon on simulator devices. In order to explain the experimental findings we have performed simulations of the transient and found that only when energy dependent cross sections are adopted do the calculations correctly reproduce the steady state and overshoot currents and also the transient duration. A physical interpretation of this phenomenon is presented, together with an analysis of the dependence of the transient upon the length of the channel and upon the source-drain voltage.

Citation Download Citation

Nathan Bavidge, Mauro Boero, Piero Migliorato, and Tatsuya Shimoda "Switch-on transient behavior in low-temperature polysilicon thin film transistors", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); https://doi.org/10.1117/12.424859

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