Far-infrared characterization of GaN epilayers

G. Mirjalili; Terence J. Parker; Tin S. Cheng; C. Thomas Foxon; John W. Orton

doi:10.1117/12.417585

8 March 2001 Far-infrared characterization of GaN epilayers

G. Mirjalili, Terence J. Parker, Tin S. Cheng, C. Thomas Foxon, John W. Orton

Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417585
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

The far infrared optical properties of a selection of thin epitaxial layers of GaN deposited on GaAs substrates by molecular epitaxy (MBE) have been studied by polarized oblique-incidence reflection spectroscopy at 77 and 300 K. The epilayers were grown in the cubic ((beta) -GaN) and wurtzite ((alpha) -GaN) phases. The vibrational and electronic properties of the samples have been determined by using standard optical transform matrix method to fit computed reflectivity spectra of the layered samples to the measured spectra. The model was extended to deal with anisotropic dielectric functions to account for the phonon and plasmon responses of (alpha) -GaN. In s-polarized measurements, the bulk plasma response gives direct information on the free carrier dynamics in the plane of the epilayer. The normal componento f the free carrier dielectric response couples strongly to Brewster and Berreman interface modes at frequencies close tot he LO phonon frequency. In p-polarization measurements, these interface modes have been observed and assigned with the aid of dispersion curve calculations. It is shown that Brewster and Berreman interface modes can be used to characterize the structural and electronic properties of the samples.

Citation Download Citation

G. Mirjalili, Terence J. Parker, Tin S. Cheng, C. Thomas Foxon, and John W. Orton "Far-infrared characterization of GaN epilayers", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417585

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