Paper
1 February 2001 Evaluation of carbon surface diffusion on silicon by using surface phase transitions
F. Scharmann, P. Maslarski, D. Lehmkuhl, Th. Stauden, Joerg Pezoldt
Author Affiliations +
Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417645
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation
Abstract
The first stage of the interaction of carbon with the silicon surface is the formation of the carbon induced Si(100)c(4X4) and the Si(111)((root)3x(root)3)R30 degree(s) reconstruction. This stage of the carbon silicon interaction was used to determine the surface diffusion coefficient of carbon on reconstructed (100) and (111) silicon surfaces with in situ reflection high energy electron diffraction. The parameters were determined by using a phenomenological model describing the time dependence of the surface phase transition.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Scharmann, P. Maslarski, D. Lehmkuhl, Th. Stauden, and Joerg Pezoldt "Evaluation of carbon surface diffusion on silicon by using surface phase transitions", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); https://doi.org/10.1117/12.417645
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Cited by 3 scholarly publications.
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KEYWORDS
Carbon

Silicon

Silicon carbide

Diffusion

Diffraction

Chemical species

Data modeling

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