Enhancement of quantum efficiency of narrow-gap semiconductors infrared emission

S. G. Gasan-Zade; Alexej G. Kollyukh; Leontiy F. Linnik; G. A. Shepelskii; S. V. Staryj; M. V. Strikha; Vladimir A. Boiko

doi:10.1117/12.417776

22 February 2001 Enhancement of quantum efficiency of narrow-gap semiconductors infrared emission

S. G. Gasan-Zade, Alexej G. Kollyukh, Leontiy F. Linnik, G. A. Shepelskii, S. V. Staryj, M. V. Strikha, Vladimir A. Boiko

Author Affiliations +

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417776
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

It was shown, that the uniaxial compression leads to the increase of Auger lifetimes in the narrow gap semi-conductors, and to the decrease of the radiative band to band lifetimes. The quantum efficiency can be increased up to 1 on the base of this effect. Experimental results are obtained for InSb an HgCdTe.

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S. G. Gasan-Zade, Alexej G. Kollyukh, Leontiy F. Linnik, G. A. Shepelskii, S. V. Staryj, M. V. Strikha, and Vladimir A. Boiko "Enhancement of quantum efficiency of narrow-gap semiconductors infrared emission", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417776

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