Peak Conductance Measurements Of Gaas Switching Devices

Barry A. Bell; Arnold G. Perrey

doi:10.1117/12.966085

28 November 1983 Peak Conductance Measurements Of Gaas Switching Devices

Barry A. Bell, Arnold G. Perrey

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966085
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

This paper describes the test apparatus and circuitry used to make measurements of pulsed light conductance on samples of high resistivity (10⁷ Ω-cm) gallium arsenide switching devices, having nominal 25 PM and 700 Pm gap spacings. Differences in conductance are observed on variously grown samples. Maximum peak light conductance obtained was ≈2 millisiemens for an effective irradiated optical power on the (25 μm) gap of approximately 130 milliwatts (λ = 850 nm). Comparisons are made between the observed pulse measurements and the pulse waveforms generated by computer simulation using a model based on a theoretical analysis of the relationships between photoconductance and irradiated optical power.

Citation Download Citation

Barry A. Bell and Arnold G. Perrey "Peak Conductance Measurements Of Gaas Switching Devices", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966085

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