Paper
17 April 2001 Comparison of the performance of near-room temperature Hg1-xCdxTe and InAs1-xSbx photodiodes
Robert Ciupa
Author Affiliations +
Abstract
A numerical technique has been used to solve the carrier transport equations for Hg1-xCdxTe and InAs1-xSbx photodiode operating near room temperature. The model calculates the spatial distribution of the electric field, the electron hole concentrations and the generation-recombination mechanisms. Also the effect of doping profiles on the photodiode parameters (R0A product, detectivity) is analyzed. The R0A product is controlled by a diffusion limited mechanism. In the case of HgCdTe photodiodes, only two processes of generation and recombination are important: Auger 1 and Auger 7; whereas in InAsSb photodiodes also the Auger S process has an essential significance. It is proved that Hg1-xCdxTe and InAs1- xSbx photodiodes of optimum construction have similar detection parameters. This fact together with some advantages of InAsSb in comparison with HgCdTe indicates that InAsSb ia a potential competitor to HgCdTe as material for intrinsic detectors in the 3-5 micrometers and 8-12 micrometers spectral range.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Ciupa "Comparison of the performance of near-room temperature Hg1-xCdxTe and InAs1-xSbx photodiodes", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425463
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photodiodes

Mercury cadmium telluride

Sensors

Diffusion

Sodium

Doping

Crystals

RELATED CONTENT


Back to Top