Paper
30 July 2001 Design of strong Bragg gratings in semiconductors
B. M. Azizur Rahman, N. Mahmood, J. M. Gomoluch, Najm Anwar, Kenneth T. V. Grattan
Author Affiliations +
Proceedings Volume 4532, Active and Passive Optical Components for WDM Communication; (2001) https://doi.org/10.1117/12.436019
Event: ITCom 2001: International Symposium on the Convergence of IT and Communications, 2001, Denver, CO, United States
Abstract
Bragg grating-based optical systems are important for both telecommunications and sensor applications. Work to date on the simulation of such systems has concentrated upon using approximate methods such as the coupled mode theory (CMT). In this work, a combination of three numerical methods has ben used, all of which are rigorous and at the same time computationally very efficient. The new approach presented here incorporates the finite element, the least square boundary residual and the transfer matrix methods. The simulated results obtained show that the CMT is in general adequate for the characterization of Bragg grating devices in fiber, since the perturbed refractive index change is small. However, for Bragg grating devices in semiconductors, the CMT is shown to generate less accurate result. Simulated results obtained for various types of grating devices, such as uniform, chirped, apodized, phase-shifted, super- structures and sampled grating devices are presented.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. M. Azizur Rahman, N. Mahmood, J. M. Gomoluch, Najm Anwar, and Kenneth T. V. Grattan "Design of strong Bragg gratings in semiconductors", Proc. SPIE 4532, Active and Passive Optical Components for WDM Communication, (30 July 2001); https://doi.org/10.1117/12.436019
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KEYWORDS
Fiber Bragg gratings

Semiconductors

Apodization

Refractive index

Optical design

Scattering

Semiconductor lasers

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