Paper
28 September 2001 Silicon grisms fabricated by anisotropic wet etching and direct silicon bonding for high-resolution IR spectroscopy
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Proceedings Volume 4557, Micromachining and Microfabrication Process Technology VII; (2001) https://doi.org/10.1117/12.442946
Event: Micromachining and Microfabrication, 2001, San Francisco, CA, United States
Abstract
Silicon grisms are very attractive as devices for IR spectroscopy in terms of high resolving power and compactness, necessary for many astronomical applications and for implementation of spectroscopic modes in large telescopes respectively. We present the fabrication process of a silicon grism as composed by an IR transmission grating coupled to a silicon prism. The silicon gratings were manufactured using silicon micromachining techniques, as electron beam lithography and wet anisotropic etching, achieving good uniformity over all the large surface (32 X 32 mm2) and grating facets of excellent optical quality; the final grism was realized by means of direct bonding of the grating onto the prism face. The results of laboratory tests on the first prototype are presented.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elena Cianci, Vittorio Foglietti, Fabrizio Vitali, and Dario Lorenzetti "Silicon grisms fabricated by anisotropic wet etching and direct silicon bonding for high-resolution IR spectroscopy", Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, (28 September 2001); https://doi.org/10.1117/12.442946
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Cited by 3 scholarly publications.
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KEYWORDS
Silicon

Prisms

Semiconducting wafers

Etching

Surface finishing

Anisotropic etching

Infrared spectroscopy

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