Quantum transport model for sub-100 nm CMOS devices

Zhiping Yu; D. W. Yergeau; Robert W. Dutton; A. Svizhenko; M. P. Anantram

doi:10.1117/12.444663

15 October 2001 Quantum transport model for sub-100 nm CMOS devices

Zhiping Yu, D. W. Yergeau, Robert W. Dutton, A. Svizhenko, M. P. Anantram

Proceedings Volume 4600, Advances in Microelectronic Device Technology; (2001) https://doi.org/10.1117/12.444663
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

Even at room temperature, sub-100 ,nm CMOS devices are strongly affected by quantum mechanical effects. In addition to commonly-known energy quantization in the channel, a charge dipole is observed to appear in the poly-gate, which shifts the threshold voltage in a different way from channel quantization. Moreover, due to the multi-dimensional nature of the structure, conventional Schrodinger/Poisson's equation solutions in 1D are no longer adequate for predicting the device characteristics. In this paper, two macroscopic, multi-dimensional quantum transport models, density gradient (DG) and non-equilibrium Green's function (NEGF), are discussed. Validity and application scope are established through comparing to measured data and benchmarking with MIT well-tempered MOSFETs (wtm25 and 90 nm, respectively). It is shown both qualitatively and quantitatively that quantum effects are now required in profile calibration and inverse modeling.

Citation Download Citation

Zhiping Yu, D. W. Yergeau, Robert W. Dutton, A. Svizhenko, and M. P. Anantram "Quantum transport model for sub-100 nm CMOS devices", Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); https://doi.org/10.1117/12.444663

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