Lasing emission of electrically pumped InGaAs/InGaAsP microcylinder laser

Hui Suo; Li Qin; Yongqiang Ning; Yuzhai Pan; Yun Liu; Lijun Wang

doi:10.1117/12.445710

16 October 2001 Lasing emission of electrically pumped InGaAs/InGaAsP microcylinder laser

Hui Suo, Li Qin, Yongqiang Ning, Yuzhai Pan, Yun Liu, Lijun Wang

Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445710
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

In this work InGaAs/InGaAsP/InP microcylinder lasers with diameter of 10 micrometers were fabricated by wet chemical etching. At liquid nitrogen temperature the lasers show lasing at 1.55 micrometers when electrically pumped with pulse width 300 ns and cycle of 200 microsecond(s) . The threshold current is about 3 mA.

Citation Download Citation

Hui Suo, Li Qin, Yongqiang Ning, Yuzhai Pan, Yun Liu, and Lijun Wang "Lasing emission of electrically pumped InGaAs/InGaAsP microcylinder laser", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445710

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