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A simpler method for the fabrication of multilayer porous silicon optical waveguides is studied in this paper. It is based on the dependence of porosity on illumination intensity during anodisation process. The influence of illumination intensity on porosity during preparing porous silicon was studied. The experimental results show that the porosity of porous silicon has a maximum value under certain illumination intensity. Porous silicon channel waveguides were obtained by controlling the illumination intensities and the anodisation time in anodisation time in anodisation process.
Zhenhong Jia
"Porous silicon optical waveguides formed by anodization process", Proc. SPIE 4603, Fiber Optics and Optoelectronics for Network Applications, (16 October 2001); https://doi.org/10.1117/12.444568
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Zhenhong Jia, "Porous silicon optical waveguides formed by anodization process," Proc. SPIE 4603, Fiber Optics and Optoelectronics for Network Applications, (16 October 2001); https://doi.org/10.1117/12.444568