Electrical Characteristics Of Amorphous Ni[sub]36[/sub]W[sub]64[/sub] Contacts On Silicon

M. F. Zhu; I. Suni; M-A. Nicolet

doi:10.1117/12.941342

31 May 1984 Electrical Characteristics Of Amorphous Ni₃₆W₆₄ Contacts On Silicon

M. F. Zhu, I. Suni, M-A. Nicolet

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941342
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The Schottky barrier heights of amorphous Ni₃₆W₆₄ film contacts on n-type and p-type silicon are 0.65 eV and 0.45 eV, respectively. The barrier heights stay constant up to 550Ã‚Â°C for a 30 min annealing in vacuum, but the interface, the leakage current, and the ideality factors degrade at 450°C. The contact resistivities of amorphous Ni-W films is (1.4 ± 0.3) 10_-6Ωcm² on n⁺Si and (8.9 ± 0.2) 10^-⁷ 0cm2 on p⁺Si. The values remain stable after vacuum annealing for 30 min up to 600°C.

Citation Download Citation

M. F. Zhu, I. Suni, and M-A. Nicolet "Electrical Characteristics Of Amorphous Ni₃₆W₆₄ Contacts On Silicon", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941342

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