Paper
27 March 2002 Silicon germanium quantum cascade heterostructures for far-infrared emission
Robert W. Kelsall, Zoran Ikonic, Paul Harrison, Stephen A. Lynch, Robert Bates, Douglas J. Paul, David J. Norris, San Lin Liew, Anthony G. Cullis, David J. Robbins, Pavel Murzyn, Carl R. Pidgeon, Donald D. Arnone, Richard A. Soref
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Abstract
Terahertz (far-infrared) intersubband electroluminescence is reported in p-type Si/SiGe quantum wells and quantum cascade structures. Surface-normal emission (without the aid of a surface grating) from light hole - heavy hole intersubband transitions has been observed for the first time in a quantum cascade device. Edge-emission measurements have also been performed, which show emission from both heavy hole - heavy hole and light hole - heavy hole transitions, and have allowed demonstration of the polarisation dependence of the emitted power, according to the selection rules for the intersubband interactions. The electroluminescence is visible up to temperatures of ~150K, in the multiple quantum well structures, and >=77K in the quantum cascade structure.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert W. Kelsall, Zoran Ikonic, Paul Harrison, Stephen A. Lynch, Robert Bates, Douglas J. Paul, David J. Norris, San Lin Liew, Anthony G. Cullis, David J. Robbins, Pavel Murzyn, Carl R. Pidgeon, Donald D. Arnone, and Richard A. Soref "Silicon germanium quantum cascade heterostructures for far-infrared emission", Proc. SPIE 4654, Silicon-based and Hybrid Optoelectronics IV, (27 March 2002); https://doi.org/10.1117/12.463846
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KEYWORDS
Silicon

Germanium

Quantum wells

Heterojunctions

Electroluminescence

Quantum cascade lasers

FT-IR spectroscopy

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