Operation Of Monolithic Laser/Multiplexer Optoelectronic IC

J K Carney; M. Helix; R. M. Kolbas

doi:10.1117/12.941562

10 May 1984 Operation Of Monolithic Laser/Multiplexer Optoelectronic IC

J K Carney, M. Helix, R. M. Kolbas

Author Affiliations +

Proceedings Volume 0466, Optical Interfaces for Digital Circuits & Systems; (1984) https://doi.org/10.1117/12.941562
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

We have demonstrated the first operational integrated optoelectronic circuit which combines a semiconductor laser diode with small-scale (36 gates) GaAs circuitry. The successful development of this technology has demonstrated one of the key elements for high speed optical interconnects using fabrication techniques which are compatible with medium to large scale integration. Due to the different and often conflicting requirements for high performance lasers and electronics, only very elementary integrated laser/driver structures (less than six transistors) have been reported until now. We have designed and fabricated an integrated optoelectronic transmitter containing a tranverse junction stripe (TJS) laser, a field effect transistor (FET) driver, and a 4:1 multiplexer (Mux). The Mux and driver active regions are formed by selective ion implantation while the TJS laser is fabricated in epitaxial layers grown in a well that is etched into the substrate. The Mux consists of 36 SDFL (Schottky diode FET logic) NOR gates. The MESFETs in the GaAs circuit have 1 micron gate lengths and a 1.2V threshold voltage. The transmitter chip has been tested at 160 MHz clock rates. Higher speeds are possible.

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J K Carney, M. Helix, and R. M. Kolbas "Operation Of Monolithic Laser/Multiplexer Optoelectronic IC", Proc. SPIE 0466, Optical Interfaces for Digital Circuits & Systems, (10 May 1984); https://doi.org/10.1117/12.941562

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