Paper
24 April 2002 Lux transfer: CMOS versus CCD
Author Affiliations +
Abstract
This paper compares the performance of competing CCD and CMOS imaging sensors including backside-illuminated devices. Comparisons are made through a new performance transfer curve that shows at a glance performance deficiencies for any given pixel architecture analyzed or characterized. Called Lux Transfer, the curve plots signal-to-noise as a function of absolute light intensity for a family of exposure times over the sensor's dynamic range (i.e., read noise to full well). Critical performance parameters on which the curve is based are reviewed and analytically described (e.g., QE, pixel nonuniformity, full well, dark current, read noise, MTF, etc.). Besides S/N, many by- products come from lux transfer including dynamic range, responsivity (e-/lux-sec), charge capacity, linearity and ISO rating. Experimental data generated by 4 micrometers -- 3T pixel DVGA and a 5.6 micrometers -- 3T pixel DXGA CMOS sensors are presented that demonstrate lux transfer use.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James R. Janesick "Lux transfer: CMOS versus CCD", Proc. SPIE 4669, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications III, (24 April 2002); https://doi.org/10.1117/12.463444
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CITATIONS
Cited by 11 scholarly publications.
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KEYWORDS
Charge-coupled devices

Interference (communication)

Sensors

Signal to noise ratio

Diodes

Quantum efficiency

CMOS sensors

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